View 80NF75L_2034836.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/11 november 2001 . stp80NF75L stb80NF75L stb80NF75L-1 n-channel 75v - 0.008 w - 80a to-220/d 2 pak/i 2 pak stripfet? ii power mosfet n typical r ds (on) = 0.008 w n exceptional dv/dt capability n 100% avalanche tested n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high switching speed n motor control, audio amplifiers n dc-dc & dc-ac converters n solenoid and relay drivers type v dss r ds(on) i d stp80NF75L stb80NF75L stb80NF75L-1 75 v 75 v 75 v <0.01 w <0.01 w <0.01 w 80 a 80 a 80 a 1 2 3 to-220 1 3 d 2 pak to-263 i 2 pak to-262 1 2 3 absolute maximum ratings ( )current limited by package ( ) pulse width limited by safe operating area. (1) i sd 80a, di/dt 960a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 40a, v dd = 40v symbol parameter value unit v ds drain-source voltage (v gs = 0) 75 v v dgr drain-gate voltage (r gs = 20 k w ) 75 v v gs gate- source voltage 16 v i d ( ) drain current (continuos) at t c = 25c 80 a i d drain current (continuos) at t c = 100c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c dv/dt (1) peak diode recovery voltage slope 12 v/ns e as (2) single pulse avalanche energy 930 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature internal schematic diagram www..net
stb80NF75L/-1/ stp80NF75L 2/11 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 1.6 2.5 v r ds(on) static drain-source on resistance v gs = 5 v i d = 40 a v gs = 10 v i d = 40 a 0.01 0.008 0.013 0.010 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 25 v i d = 40 a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 5000 835 360 pf pf pf
3/11 stb80NF75L/-1/ stp80NF75L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 37 v i d = 40 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 30 145 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 60 v i d = 80 a v gs = 5v 110 20 55 140 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 37v i d = 40 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 130 90 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 105 340 9 ns nc a electrical characteristics (continued) thermal impedance safe operating area
stb80NF75L/-1/ stp80NF75L 4/11 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/11 stb80NF75L/-1/ stp80NF75L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
stb80NF75L/-1/ stp80NF75L 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 stb80NF75L/-1/ stp80NF75L dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb80NF75L/-1/ stp80NF75L 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/11 stb80NF75L/-1/ stp80NF75L dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
stb80NF75L/-1/ stp80NF75L 10/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
11/11 stb80NF75L/-1/ stp80NF75L information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

▲Up To Search▲

Price & Availability of 80NF75L

	To Download 80NF75L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .